1/f and RTS Noise in InGaAs Nanowire MOSFETs

Forskningsoutput: KonferensbidragKonferenspaper, ej i proceeding/ej förlagsutgivet

Abstract

Low-frequency noise measurements were performed on high-performance InGaAs nanowire MOSFETs. 1/f noise measurements show number fluctuations, rather than mobility fluctuations, as the dominant noise source. The minimum equivalent input gate voltage noise reported here is 80 μm2μV2/Hz, among the lowest values for III-V FETs, and showing the feasibility of a high-quality, low trap density, high-k gate oxide on InGaAs.

Detaljer

Författare
Enheter & grupper
Externa organisationer
  • Lund University
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Nanoteknik

Nyckelord

Originalspråkengelska
StatusPublished - 2017 jun 28
PublikationskategoriForskning
Peer review utfördNej
EvenemangConference on Insulating Films on Semiconductors (INFOS) - Potsdam, Tyskland
Varaktighet: 2017 jun 272017 jun 30

Konferens

KonferensConference on Insulating Films on Semiconductors (INFOS)
LandTyskland
OrtPotsdam
Period2017/06/272017/06/30