1/f and RTS Noise in InGaAs Nanowire MOSFETs

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Bibtex

@conference{f053a160ffbe4143bd3d6f3bf579aad1,
title = "1/f and RTS Noise in InGaAs Nanowire MOSFETs",
abstract = "Low-frequency noise measurements were performed on high-performance InGaAs nanowire MOSFETs. 1/f noise measurements show number fluctuations, rather than mobility fluctuations, as the dominant noise source. The minimum equivalent input gate voltage noise reported here is 80 μm2μV2/Hz, among the lowest values for III-V FETs, and showing the feasibility of a high-quality, low trap density, high-k gate oxide on InGaAs.",
keywords = "InGaAs, MOSFETs, Nanowires, 1/f noise, RTS noise, Elastic tunnelling",
author = "Christian M{\"o}hle and Cezar Zota and Markus Hellenbrand and Erik Lind",
year = "2017",
month = jun,
day = "28",
language = "English",
note = "Conference on Insulating Films on Semiconductors (INFOS) ; Conference date: 27-06-2017 Through 30-06-2017",

}