1/f and RTS Noise in InGaAs Nanowire MOSFETs

Forskningsoutput: KonferensbidragKonferenspaper, ej i proceeding/ej förlagsutgivet

Standard

1/f and RTS Noise in InGaAs Nanowire MOSFETs. / Möhle, Christian; Zota, Cezar; Hellenbrand, Markus; Lind, Erik.

2017. Artikel presenterad vid Conference on Insulating Films on Semiconductors (INFOS), Potsdam, Tyskland.

Forskningsoutput: KonferensbidragKonferenspaper, ej i proceeding/ej förlagsutgivet

Harvard

Möhle, C, Zota, C, Hellenbrand, M & Lind, E 2017, '1/f and RTS Noise in InGaAs Nanowire MOSFETs', Artikel presenterad vid Conference on Insulating Films on Semiconductors (INFOS), Potsdam, Tyskland, 2017/06/27 - 2017/06/30.

APA

Möhle, C., Zota, C., Hellenbrand, M., & Lind, E. (2017). 1/f and RTS Noise in InGaAs Nanowire MOSFETs. Artikel presenterad vid Conference on Insulating Films on Semiconductors (INFOS), Potsdam, Tyskland.

CBE

Möhle C, Zota C, Hellenbrand M, Lind E. 2017. 1/f and RTS Noise in InGaAs Nanowire MOSFETs. Artikel presenterad vid Conference on Insulating Films on Semiconductors (INFOS), Potsdam, Tyskland.

MLA

Möhle, Christian et al. 1/f and RTS Noise in InGaAs Nanowire MOSFETs. Conference on Insulating Films on Semiconductors (INFOS), 27 jun 2017, Potsdam, Tyskland, Konferenspaper, ej i proceeding/ej förlagsutgivet, 2017.

Vancouver

Möhle C, Zota C, Hellenbrand M, Lind E. 1/f and RTS Noise in InGaAs Nanowire MOSFETs. 2017. Artikel presenterad vid Conference on Insulating Films on Semiconductors (INFOS), Potsdam, Tyskland.

Author

Möhle, Christian ; Zota, Cezar ; Hellenbrand, Markus ; Lind, Erik. / 1/f and RTS Noise in InGaAs Nanowire MOSFETs. Artikel presenterad vid Conference on Insulating Films on Semiconductors (INFOS), Potsdam, Tyskland.

RIS

TY - CONF

T1 - 1/f and RTS Noise in InGaAs Nanowire MOSFETs

AU - Möhle, Christian

AU - Zota, Cezar

AU - Hellenbrand, Markus

AU - Lind, Erik

PY - 2017/6/28

Y1 - 2017/6/28

N2 - Low-frequency noise measurements were performed on high-performance InGaAs nanowire MOSFETs. 1/f noise measurements show number fluctuations, rather than mobility fluctuations, as the dominant noise source. The minimum equivalent input gate voltage noise reported here is 80 μm2μV2/Hz, among the lowest values for III-V FETs, and showing the feasibility of a high-quality, low trap density, high-k gate oxide on InGaAs.

AB - Low-frequency noise measurements were performed on high-performance InGaAs nanowire MOSFETs. 1/f noise measurements show number fluctuations, rather than mobility fluctuations, as the dominant noise source. The minimum equivalent input gate voltage noise reported here is 80 μm2μV2/Hz, among the lowest values for III-V FETs, and showing the feasibility of a high-quality, low trap density, high-k gate oxide on InGaAs.

KW - InGaAs

KW - MOSFETs

KW - Nanowires

KW - 1/f noise

KW - RTS noise

KW - Elastic tunnelling

M3 - Paper, not in proceeding

T2 - Conference on Insulating Films on Semiconductors (INFOS)

Y2 - 27 June 2017 through 30 June 2017

ER -