1/f Noise Characterization in CMOS Transistors in 0.13um Technology

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Abstract

Low-frequency noise has been studied on a set of n- and p-channel CMOS transistors fabricated in a 0.13mum technology. Noise measurements have been performed on transistors with different gate lengths operating under wide bias conditions, ranging from weak to strong inversion. Noise origin has been identified for both type of devices, and the oxide trap density Nt, the Hooge parameter alphaH and the Coulomb scattering parameter alphas have been extracted. The experimental results are compared with simulations using the BSIM3v3 MOS model

Detaljer

Författare
Externa organisationer
  • External Organization - Unknown
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Elektroteknik och elektronik
Originalspråkengelska
Titel på värdpublikation24th Norchip Conference, 2006.
Sidor81-84
StatusPublished - 2006
PublikationskategoriForskning
Peer review utfördJa
Externt publiceradJa