1/f Noise Characterization in CMOS Transistors in 0.13um Technology

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1/f Noise Characterization in CMOS Transistors in 0.13um Technology. / Citakovic, Jelena; Stenberg, Lars; Andreani, Pietro.

24th Norchip Conference, 2006.. 2006. s. 81-84.

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Citakovic, Jelena ; Stenberg, Lars ; Andreani, Pietro. / 1/f Noise Characterization in CMOS Transistors in 0.13um Technology. 24th Norchip Conference, 2006.. 2006. s. 81-84

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TY - GEN

T1 - 1/f Noise Characterization in CMOS Transistors in 0.13um Technology

AU - Citakovic, Jelena

AU - Stenberg, Lars

AU - Andreani, Pietro

PY - 2006

Y1 - 2006

N2 - Low-frequency noise has been studied on a set of n- and p-channel CMOS transistors fabricated in a 0.13mum technology. Noise measurements have been performed on transistors with different gate lengths operating under wide bias conditions, ranging from weak to strong inversion. Noise origin has been identified for both type of devices, and the oxide trap density Nt, the Hooge parameter alphaH and the Coulomb scattering parameter alphas have been extracted. The experimental results are compared with simulations using the BSIM3v3 MOS model

AB - Low-frequency noise has been studied on a set of n- and p-channel CMOS transistors fabricated in a 0.13mum technology. Noise measurements have been performed on transistors with different gate lengths operating under wide bias conditions, ranging from weak to strong inversion. Noise origin has been identified for both type of devices, and the oxide trap density Nt, the Hooge parameter alphaH and the Coulomb scattering parameter alphas have been extracted. The experimental results are compared with simulations using the BSIM3v3 MOS model

U2 - 10.1109/NORCHP.2006.329249

DO - 10.1109/NORCHP.2006.329249

M3 - Paper in conference proceeding

SN - 1-4244-0772-9

SP - 81

EP - 84

BT - 24th Norchip Conference, 2006.

ER -