1/f-noise in Vertical InAs Nanowire Transistors

Forskningsoutput: Kapitel i bok/rapport/Conference proceedingKonferenspaper i proceeding

Abstract

The material quality at high-k interfaces are a major concern for FET devices. We study the effect on two types of InAs nanowire (NW) transistors and compare their characteristics. It is found that by introducing an inner layer of Al2O3 at the high-kappa interface, the low frequency noise (LFN) performance regarding gate voltage noise spectral density, S-Vg, is improved by one order of magnitude per unit gate area.

Detaljer

Författare
Enheter & grupper
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Elektroteknik och elektronik

Nyckelord

Originalspråkengelska
Titel på värdpublikation2013 International Conference on Indium Phosphide and Related Materials (IPRM)
FörlagIEEE - Institute of Electrical and Electronics Engineers Inc.
Sidor1-2
StatusPublished - 2013
PublikationskategoriForskning
Peer review utfördJa
Evenemang25th International Conference on Indium Phosphide and Related Materials (IPRM) - Kobe, Japan
Varaktighet: 2013 maj 192013 maj 23

Publikationsserier

Namn
ISSN (tryckt)1092-8669

Konferens

Konferens25th International Conference on Indium Phosphide and Related Materials (IPRM)
LandJapan
OrtKobe
Period2013/05/192013/05/23

Nedladdningar

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