A 24GHz, 18dBm, Broadband, Three Stacked Power Amplifier in 28nm FDSOI

Forskningsoutput: Kapitel i bok/rapport/Conference proceedingKonferenspaper i proceeding

Abstract

A three stacked power amplifier implemented in 28nm fully depleted silicon-on- insulator complementary metal oxide semi-conductor technology (FDSOI CMOS) is presented. It has a differential architecture with on-chip input and output transformer baluns. The PA achieves a saturated output power level of 17.9dBm with a peak power added efficiency of 7% and an output referred gain compression point of 16.2dBm. It occupies a silicon area of 0.4 mm 2 , uses a supply voltage of 3V, and has a 3.3GHz 1-dB bandwidth at 24GHz.

Detaljer

Författare
Enheter & grupper
Externa organisationer
  • Ericsson AB
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Annan elektroteknik och elektronik
Originalspråkengelska
Titel på värdpublikation2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC)
FörlagIEEE - Institute of Electrical and Electronics Engineers Inc.
Sidor1-4
Antal sidor4
ISBN (elektroniskt)978-1-5386-7656-1
ISBN (tryckt)978-1-5386-7657-8
StatusPublished - 2018 okt 30
PublikationskategoriForskning
Peer review utfördJa
Evenemang2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC) - Tallin, Estland
Varaktighet: 2018 okt 302018 okt 31

Konferens

Konferens2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC)
LandEstland
OrtTallin
Period2018/10/302018/10/31

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