A structure of CdS/CuxS quantum dots sensitized solar cells

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A structure of CdS/CuxS quantum dots sensitized solar cells. / Shen, Ting; Bian, Lu; Li, Bo; Zheng, Kaibo; Pullerits, Tönu; Tian, Jianjun.

I: Applied Physics Letters, Vol. 108, Nr. 21, 213901, 23.05.2016.

Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

Harvard

Shen, T, Bian, L, Li, B, Zheng, K, Pullerits, T & Tian, J 2016, 'A structure of CdS/CuxS quantum dots sensitized solar cells', Applied Physics Letters, vol. 108, nr. 21, 213901. https://doi.org/10.1063/1.4952435

APA

Shen, T., Bian, L., Li, B., Zheng, K., Pullerits, T., & Tian, J. (2016). A structure of CdS/CuxS quantum dots sensitized solar cells. Applied Physics Letters, 108(21), [213901]. https://doi.org/10.1063/1.4952435

CBE

Shen T, Bian L, Li B, Zheng K, Pullerits T, Tian J. 2016. A structure of CdS/CuxS quantum dots sensitized solar cells. Applied Physics Letters. 108(21):Article 213901. https://doi.org/10.1063/1.4952435

MLA

Shen, Ting et al. "A structure of CdS/CuxS quantum dots sensitized solar cells". Applied Physics Letters. 2016. 108(21). https://doi.org/10.1063/1.4952435

Vancouver

Shen T, Bian L, Li B, Zheng K, Pullerits T, Tian J. A structure of CdS/CuxS quantum dots sensitized solar cells. Applied Physics Letters. 2016 maj 23;108(21). 213901. https://doi.org/10.1063/1.4952435

Author

Shen, Ting ; Bian, Lu ; Li, Bo ; Zheng, Kaibo ; Pullerits, Tönu ; Tian, Jianjun. / A structure of CdS/CuxS quantum dots sensitized solar cells. I: Applied Physics Letters. 2016 ; Vol. 108, Nr. 21.

RIS

TY - JOUR

T1 - A structure of CdS/CuxS quantum dots sensitized solar cells

AU - Shen, Ting

AU - Bian, Lu

AU - Li, Bo

AU - Zheng, Kaibo

AU - Pullerits, Tönu

AU - Tian, Jianjun

PY - 2016/5/23

Y1 - 2016/5/23

N2 - This work introduces a type of CdS/CuxS quantum dots (QDs) as sensitizers in quantum dot sensitized solar cells by in-situ cationic exchange reaction method where CdS photoanode is directly immersed in CuCl2 methanol solution to replace Cd2+ by Cu2+. The p-type CuxS layer on the surface of the CdS QDs can be considered as hole transport material, which not only enhances the light harvesting of photoanode but also boosts the charge separation after photo-excitation. Therefore, both the electron collection efficiency and power conversion efficiency of the solar cell are improved from 80% to 92% and from 1.21% to 2.78%, respectively.

AB - This work introduces a type of CdS/CuxS quantum dots (QDs) as sensitizers in quantum dot sensitized solar cells by in-situ cationic exchange reaction method where CdS photoanode is directly immersed in CuCl2 methanol solution to replace Cd2+ by Cu2+. The p-type CuxS layer on the surface of the CdS QDs can be considered as hole transport material, which not only enhances the light harvesting of photoanode but also boosts the charge separation after photo-excitation. Therefore, both the electron collection efficiency and power conversion efficiency of the solar cell are improved from 80% to 92% and from 1.21% to 2.78%, respectively.

UR - http://www.scopus.com/inward/record.url?scp=84971368286&partnerID=8YFLogxK

U2 - 10.1063/1.4952435

DO - 10.1063/1.4952435

M3 - Article

C2 - 27375297

AN - SCOPUS:84971368286

VL - 108

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 21

M1 - 213901

ER -