Absorption of light in InP nanowire arrays

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Absorption of light in InP nanowire arrays. / Anttu, Nicklas; Abrand, Alireza; Asoli, Damir; Heurlin, Magnus; Aberg, Ingvar; Samuelson, Lars; Borgström, Magnus.

I: Nano Reseach, Vol. 7, Nr. 6, 2014, s. 816-823.

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

Harvard

Anttu, N, Abrand, A, Asoli, D, Heurlin, M, Aberg, I, Samuelson, L & Borgström, M 2014, 'Absorption of light in InP nanowire arrays', Nano Reseach, vol. 7, nr. 6, s. 816-823. https://doi.org/10.1007/s12274-014-0442-y

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Vancouver

Anttu N, Abrand A, Asoli D, Heurlin M, Aberg I, Samuelson L et al. Absorption of light in InP nanowire arrays. Nano Reseach. 2014;7(6):816-823. https://doi.org/10.1007/s12274-014-0442-y

Author

Anttu, Nicklas ; Abrand, Alireza ; Asoli, Damir ; Heurlin, Magnus ; Aberg, Ingvar ; Samuelson, Lars ; Borgström, Magnus. / Absorption of light in InP nanowire arrays. I: Nano Reseach. 2014 ; Vol. 7, Nr. 6. s. 816-823.

RIS

TY - JOUR

T1 - Absorption of light in InP nanowire arrays

AU - Anttu, Nicklas

AU - Abrand, Alireza

AU - Asoli, Damir

AU - Heurlin, Magnus

AU - Aberg, Ingvar

AU - Samuelson, Lars

AU - Borgström, Magnus

PY - 2014

Y1 - 2014

N2 - An understanding of the absorption of light is essential for efficient photovoltaic and photodetection applications with III-V nanowire arrays. Here, we correlate experiments with modeling and verify experimentally the predicted absorption of light in InP nanowire arrays for varying nanowire diameter and length. We find that 2,000 nm long nanowires in a pitch of 400 nm can absorb 94% of the incident light with energy above the band gap and, as a consequence, light which in a simple ray-optics description would be travelling between the nanowires can be efficiently absorbed by the nanowires. Our measurements demonstrate that the absorption for long nanowires is limited by insertion reflection losses when light is coupled from the air top-region into the array. These reflection losses can be reduced by introducing a smaller diameter to the nanowire-part closest to the air top-region. For nanowire arrays with such a nanowire morphology modulation, we find that the absorptance increases monotonously with increasing diameter of the rest of the nanowire.

AB - An understanding of the absorption of light is essential for efficient photovoltaic and photodetection applications with III-V nanowire arrays. Here, we correlate experiments with modeling and verify experimentally the predicted absorption of light in InP nanowire arrays for varying nanowire diameter and length. We find that 2,000 nm long nanowires in a pitch of 400 nm can absorb 94% of the incident light with energy above the band gap and, as a consequence, light which in a simple ray-optics description would be travelling between the nanowires can be efficiently absorbed by the nanowires. Our measurements demonstrate that the absorption for long nanowires is limited by insertion reflection losses when light is coupled from the air top-region into the array. These reflection losses can be reduced by introducing a smaller diameter to the nanowire-part closest to the air top-region. For nanowire arrays with such a nanowire morphology modulation, we find that the absorptance increases monotonously with increasing diameter of the rest of the nanowire.

KW - indium phosphide

KW - semiconductor

KW - nanowire

KW - absorption of light

U2 - 10.1007/s12274-014-0442-y

DO - 10.1007/s12274-014-0442-y

M3 - Article

VL - 7

SP - 816

EP - 823

JO - Nano Reseach

T2 - Nano Reseach

JF - Nano Reseach

SN - 1998-0124

IS - 6

ER -