Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

Bibtex

@article{c3c278e1cd144e648394b873445a2f58,
title = "Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates",
abstract = "The influence of InAs orientations and high-k oxide deposition conditions on the electrical and structural quality of Au/W/Al2O3/InAs metal-oxide-semiconductor capacitors was investigated using capacitance-voltage (C-V) and x-ray photoemission spectroscopy techniques. The results suggest that the interface traps around the conduction band edge are correlated to the As-oxide amount, while less to those of As-As bonds and In-oxides. The quality of the deposited Al oxide determines the border trap density, hence the capacitance frequency dispersion. The comparison of different processing conditions is discussed, favoring a 350 C high-k oxide deposition on (111)B substrates followed by an annealing procedure at 400 oC.",
keywords = "Interface, InAs, High k, MOS capacitors",
author = "Jun Wu and Erik Lind and Rainer Timm and Martin Hjort and Anders Mikkelsen and Lars-Erik Wernersson",
year = "2012",
doi = "10.1063/1.3698094",
language = "English",
volume = "100",
pages = "132905--132905--3",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics (AIP)",
number = "13",

}