Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

Standard

Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates. / Wu, Jun; Lind, Erik; Timm, Rainer; Hjort, Martin; Mikkelsen, Anders; Wernersson, Lars-Erik.

I: Applied Physics Letters, Vol. 100, Nr. 13, 2012, s. 132905-132905-3.

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

Harvard

APA

CBE

MLA

Vancouver

Author

RIS

TY - JOUR

T1 - Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates

AU - Wu, Jun

AU - Lind, Erik

AU - Timm, Rainer

AU - Hjort, Martin

AU - Mikkelsen, Anders

AU - Wernersson, Lars-Erik

PY - 2012

Y1 - 2012

N2 - The influence of InAs orientations and high-k oxide deposition conditions on the electrical and structural quality of Au/W/Al2O3/InAs metal-oxide-semiconductor capacitors was investigated using capacitance-voltage (C-V) and x-ray photoemission spectroscopy techniques. The results suggest that the interface traps around the conduction band edge are correlated to the As-oxide amount, while less to those of As-As bonds and In-oxides. The quality of the deposited Al oxide determines the border trap density, hence the capacitance frequency dispersion. The comparison of different processing conditions is discussed, favoring a 350 C high-k oxide deposition on (111)B substrates followed by an annealing procedure at 400 oC.

AB - The influence of InAs orientations and high-k oxide deposition conditions on the electrical and structural quality of Au/W/Al2O3/InAs metal-oxide-semiconductor capacitors was investigated using capacitance-voltage (C-V) and x-ray photoemission spectroscopy techniques. The results suggest that the interface traps around the conduction band edge are correlated to the As-oxide amount, while less to those of As-As bonds and In-oxides. The quality of the deposited Al oxide determines the border trap density, hence the capacitance frequency dispersion. The comparison of different processing conditions is discussed, favoring a 350 C high-k oxide deposition on (111)B substrates followed by an annealing procedure at 400 oC.

KW - Interface

KW - InAs

KW - High k

KW - MOS capacitors

U2 - 10.1063/1.3698094

DO - 10.1063/1.3698094

M3 - Article

VL - 100

SP - 132905-132905-3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 13

ER -