Anomalous bismuth-stabilized (2x1) reconstructions on GaAs(100) and InP(100) surfaces

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

Abstract

First-principles phase diagrams of bismuth-stabilized GaAs- and InP(100) surfaces demonstrate for the first time the presence of anomalous (2 x 1) reconstructions, which disobey the common electron counting principle. Combining these theoretical results with our scanning-tunneling-microscopy and photoemission measurements, we identify novel (2 x 1) surface structures, which are composed of symmetric Bi-Bi and asymmetric mixed Bi-As and Bi-P dimers, and find that they are stabilized by stress relief and pseudogap formation.

Detaljer

Författare
  • P Laukkanen
  • M P J Punkkinen
  • H-P Komsa
  • M Ahola-Tuomi
  • K Kokko
  • M Kuzmin
  • Johan Adell
  • Janusz Sadowski
  • R E Perala
  • M Ropo
  • T T Rantala
  • I J Vayrynen
  • M Pessa
  • L Vitos
  • J Kollar
  • S Mirbt
  • B Johansson
Enheter & grupper
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Fysik
  • Naturvetenskap
Originalspråkengelska
Artikelnummer086101
TidskriftPhysical Review Letters
Volym100
Utgåva nummer8
StatusPublished - 2008
PublikationskategoriForskning
Peer review utfördJa