Anti-domain-free GaP, grown in atomically flat (001) Si sub-mu m-sized openings

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Abstract

We demonstrate a method for growth of GaP nanocrystals on Si(001), developed to avoid defects related to antiphase domain boundaries in the proximity of the GaP/Si interface. The technique is based on sub-mum-sized selective-area epitaxy of GaP on atomically flat Si in masked openings. We have used field-emission scanning electron microscopy together with transmission electron microscopy to illustrate the method with examples of monocrystalline GaP nanocrystals. The optical properties of the nanocrystals were investigated by low-temperature cathodoluminescence.

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Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Kemi
  • Den kondenserade materiens fysik
Originalspråkengelska
Sidor (från-till)4546-4548
TidskriftApplied Physics Letters
Volym80
Utgåva nummer24
StatusPublished - 2002
PublikationskategoriForskning
Peer review utfördJa