Antisymmetric magnetoresistance anomalies and magnetic domain structure in GaMnAs/InGaAs layers

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Antisymmetric magneto-resistance anomalies generated by a reversal of the magnetization are studied in a number of GaMnAs/InGaAs layers with out-of-plane (easy axis) magnetization. The anomalies occur independent of the magnetic field orientation. This shows, that once a magnetic domain with reversed magnetization is nucleated, simply the presence of the domain wall between the longitudinal contacts is sufficient to give rise to the anomaly. Very different shapes for magneto-resistance anomaly can be observed experimentally depending upon the sample. They reflect the various magnetic domain structures present inside the layers during the magnetization reversal process.


  • W. Desrat
  • S. Kamara
  • F. Terki
  • S. Charar
  • Janusz Sadowski
  • D. K. Maude
Enheter & grupper

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Fysik
  • Naturvetenskap
TidskriftSemiconductor Science and Technology
Utgåva nummer6
StatusPublished - 2009
Peer review utfördJa