Bias and temperature dependence of the escape processes in quantum dots-in-a-well infrared photodetectors

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Abstract

The performance of quantum dots-in-a-well infrared photodetectors (DWELL IPs) has been studied by means of interband and intersubband photocurrent measurements as well as dark current measurements. Using interband photocurrent measurements, substantial escape of electrons from lower lying states in the DWELL structure at large biases was revealed. Furthermore, a significant variation in the escape probability from energy states in the DWELL structure with applied bias was observed. These facts can explain the strong temperature and bias dependence of both photocurrent and dark currents in DWELL IPs. (c) 2008 American Institute of Physics.

Detaljer

Författare
  • L. Hoglund
  • P. O. Holtz
  • Håkan Pettersson
  • C. Asplund
  • Q. Wang
  • S. Almqvist
  • S. Smuk
  • E. Petrini
  • J. Y. Andersson
Enheter & grupper
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Den kondenserade materiens fysik
Originalspråkengelska
Artikelnummer103501
TidskriftApplied Physics Letters
Volym93
Utgåva nummer10
StatusPublished - 2008
PublikationskategoriForskning
Peer review utfördJa