Bias and temperature dependence of the escape processes in quantum dots-in-a-well infrared photodetectors

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

Standard

Bias and temperature dependence of the escape processes in quantum dots-in-a-well infrared photodetectors. / Hoglund, L.; Holtz, P. O.; Pettersson, Håkan; Asplund, C.; Wang, Q.; Almqvist, S.; Smuk, S.; Petrini, E.; Andersson, J. Y.

I: Applied Physics Letters, Vol. 93, Nr. 10, 103501, 2008.

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

Harvard

Hoglund, L, Holtz, PO, Pettersson, H, Asplund, C, Wang, Q, Almqvist, S, Smuk, S, Petrini, E & Andersson, JY 2008, 'Bias and temperature dependence of the escape processes in quantum dots-in-a-well infrared photodetectors', Applied Physics Letters, vol. 93, nr. 10, 103501. https://doi.org/10.1063/1.2977757

APA

Hoglund, L., Holtz, P. O., Pettersson, H., Asplund, C., Wang, Q., Almqvist, S., Smuk, S., Petrini, E., & Andersson, J. Y. (2008). Bias and temperature dependence of the escape processes in quantum dots-in-a-well infrared photodetectors. Applied Physics Letters, 93(10), [103501]. https://doi.org/10.1063/1.2977757

CBE

Hoglund L, Holtz PO, Pettersson H, Asplund C, Wang Q, Almqvist S, Smuk S, Petrini E, Andersson JY. 2008. Bias and temperature dependence of the escape processes in quantum dots-in-a-well infrared photodetectors. Applied Physics Letters. 93(10):Article 103501. https://doi.org/10.1063/1.2977757

MLA

Vancouver

Author

Hoglund, L. ; Holtz, P. O. ; Pettersson, Håkan ; Asplund, C. ; Wang, Q. ; Almqvist, S. ; Smuk, S. ; Petrini, E. ; Andersson, J. Y. / Bias and temperature dependence of the escape processes in quantum dots-in-a-well infrared photodetectors. I: Applied Physics Letters. 2008 ; Vol. 93, Nr. 10.

RIS

TY - JOUR

T1 - Bias and temperature dependence of the escape processes in quantum dots-in-a-well infrared photodetectors

AU - Hoglund, L.

AU - Holtz, P. O.

AU - Pettersson, Håkan

AU - Asplund, C.

AU - Wang, Q.

AU - Almqvist, S.

AU - Smuk, S.

AU - Petrini, E.

AU - Andersson, J. Y.

PY - 2008

Y1 - 2008

N2 - The performance of quantum dots-in-a-well infrared photodetectors (DWELL IPs) has been studied by means of interband and intersubband photocurrent measurements as well as dark current measurements. Using interband photocurrent measurements, substantial escape of electrons from lower lying states in the DWELL structure at large biases was revealed. Furthermore, a significant variation in the escape probability from energy states in the DWELL structure with applied bias was observed. These facts can explain the strong temperature and bias dependence of both photocurrent and dark currents in DWELL IPs. (c) 2008 American Institute of Physics.

AB - The performance of quantum dots-in-a-well infrared photodetectors (DWELL IPs) has been studied by means of interband and intersubband photocurrent measurements as well as dark current measurements. Using interband photocurrent measurements, substantial escape of electrons from lower lying states in the DWELL structure at large biases was revealed. Furthermore, a significant variation in the escape probability from energy states in the DWELL structure with applied bias was observed. These facts can explain the strong temperature and bias dependence of both photocurrent and dark currents in DWELL IPs. (c) 2008 American Institute of Physics.

U2 - 10.1063/1.2977757

DO - 10.1063/1.2977757

M3 - Article

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 10

M1 - 103501

ER -