Bias mediated tuning of the detection wavelength in asymmetrical quantum dots-in-a-well infrared photodetectors

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Bibtex

@article{ec9699a1d668445ea478b18617c38824,
title = "Bias mediated tuning of the detection wavelength in asymmetrical quantum dots-in-a-well infrared photodetectors",
abstract = "Bias-mediated tuning of the detection wavelength within the infrared wavelength region is demonstrated for quantum dots-in-a-well and dots-on-a-well infrared photodetectors. By positioning the InAs quantum dot layer asymmetrically in an 8 nm wide In0.15Ga0.85As/GaAs quantum well, a shift in the peak detection wavelength from 8.4 to 10.3 mu m was observed when reversing the polarity of the applied bias. For a dots-on-a-well structure, the peak detection wavelength was tuned from 5.4 to 8 mu m with small changes in the applied bias. These tuning properties could be essential for applications such as modulators and dual-color infrared detection.",
keywords = "semiconductor, quantum wells, semiconductor quantum dots, photodetectors, detectors, infrared, indium compounds, gallium arsenide, III-V semiconductors",
author = "L. Hoglund and Holtz, {P. O.} and H{\aa}kan Pettersson and C. Asplund and Q. Wang and H. Malm and S. Almqvist and E. Petrini and Andersson, {J. Y.}",
year = "2008",
doi = "10.1063/1.3033169",
language = "English",
volume = "93",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics (AIP)",
number = "20",

}