Bias mediated tuning of the detection wavelength in asymmetrical quantum dots-in-a-well infrared photodetectors

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Bias mediated tuning of the detection wavelength in asymmetrical quantum dots-in-a-well infrared photodetectors. / Hoglund, L.; Holtz, P. O.; Pettersson, Håkan; Asplund, C.; Wang, Q.; Malm, H.; Almqvist, S.; Petrini, E.; Andersson, J. Y.

I: Applied Physics Letters, Vol. 93, Nr. 20, 203512, 2008.

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

Harvard

Hoglund, L, Holtz, PO, Pettersson, H, Asplund, C, Wang, Q, Malm, H, Almqvist, S, Petrini, E & Andersson, JY 2008, 'Bias mediated tuning of the detection wavelength in asymmetrical quantum dots-in-a-well infrared photodetectors', Applied Physics Letters, vol. 93, nr. 20, 203512. https://doi.org/10.1063/1.3033169

APA

Hoglund, L., Holtz, P. O., Pettersson, H., Asplund, C., Wang, Q., Malm, H., Almqvist, S., Petrini, E., & Andersson, J. Y. (2008). Bias mediated tuning of the detection wavelength in asymmetrical quantum dots-in-a-well infrared photodetectors. Applied Physics Letters, 93(20), [203512]. https://doi.org/10.1063/1.3033169

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MLA

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Author

Hoglund, L. ; Holtz, P. O. ; Pettersson, Håkan ; Asplund, C. ; Wang, Q. ; Malm, H. ; Almqvist, S. ; Petrini, E. ; Andersson, J. Y. / Bias mediated tuning of the detection wavelength in asymmetrical quantum dots-in-a-well infrared photodetectors. I: Applied Physics Letters. 2008 ; Vol. 93, Nr. 20.

RIS

TY - JOUR

T1 - Bias mediated tuning of the detection wavelength in asymmetrical quantum dots-in-a-well infrared photodetectors

AU - Hoglund, L.

AU - Holtz, P. O.

AU - Pettersson, Håkan

AU - Asplund, C.

AU - Wang, Q.

AU - Malm, H.

AU - Almqvist, S.

AU - Petrini, E.

AU - Andersson, J. Y.

PY - 2008

Y1 - 2008

N2 - Bias-mediated tuning of the detection wavelength within the infrared wavelength region is demonstrated for quantum dots-in-a-well and dots-on-a-well infrared photodetectors. By positioning the InAs quantum dot layer asymmetrically in an 8 nm wide In0.15Ga0.85As/GaAs quantum well, a shift in the peak detection wavelength from 8.4 to 10.3 mu m was observed when reversing the polarity of the applied bias. For a dots-on-a-well structure, the peak detection wavelength was tuned from 5.4 to 8 mu m with small changes in the applied bias. These tuning properties could be essential for applications such as modulators and dual-color infrared detection.

AB - Bias-mediated tuning of the detection wavelength within the infrared wavelength region is demonstrated for quantum dots-in-a-well and dots-on-a-well infrared photodetectors. By positioning the InAs quantum dot layer asymmetrically in an 8 nm wide In0.15Ga0.85As/GaAs quantum well, a shift in the peak detection wavelength from 8.4 to 10.3 mu m was observed when reversing the polarity of the applied bias. For a dots-on-a-well structure, the peak detection wavelength was tuned from 5.4 to 8 mu m with small changes in the applied bias. These tuning properties could be essential for applications such as modulators and dual-color infrared detection.

KW - semiconductor

KW - quantum wells

KW - semiconductor quantum dots

KW - photodetectors

KW - detectors

KW - infrared

KW - indium compounds

KW - gallium arsenide

KW - III-V semiconductors

U2 - 10.1063/1.3033169

DO - 10.1063/1.3033169

M3 - Article

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 20

M1 - 203512

ER -