Bipolar gating of epitaxial graphene by intercalation of Ge

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Bipolar gating of epitaxial graphene by intercalation of Ge. / Baringhaus, J.; Stoehr, A.; Forti, S.; Krasnikov, S. A.; Zakharov, Alexei; Starke, U.; Tegenkamp, C.

I: Applied Physics Letters, Vol. 104, Nr. 26, 261602, 2014.

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

Harvard

Baringhaus, J, Stoehr, A, Forti, S, Krasnikov, SA, Zakharov, A, Starke, U & Tegenkamp, C 2014, 'Bipolar gating of epitaxial graphene by intercalation of Ge', Applied Physics Letters, vol. 104, nr. 26, 261602. https://doi.org/10.1063/1.4886411

APA

Baringhaus, J., Stoehr, A., Forti, S., Krasnikov, S. A., Zakharov, A., Starke, U., & Tegenkamp, C. (2014). Bipolar gating of epitaxial graphene by intercalation of Ge. Applied Physics Letters, 104(26), [261602]. https://doi.org/10.1063/1.4886411

CBE

Baringhaus J, Stoehr A, Forti S, Krasnikov SA, Zakharov A, Starke U, Tegenkamp C. 2014. Bipolar gating of epitaxial graphene by intercalation of Ge. Applied Physics Letters. 104(26):Article 261602. https://doi.org/10.1063/1.4886411

MLA

Vancouver

Baringhaus J, Stoehr A, Forti S, Krasnikov SA, Zakharov A, Starke U et al. Bipolar gating of epitaxial graphene by intercalation of Ge. Applied Physics Letters. 2014;104(26). 261602. https://doi.org/10.1063/1.4886411

Author

Baringhaus, J. ; Stoehr, A. ; Forti, S. ; Krasnikov, S. A. ; Zakharov, Alexei ; Starke, U. ; Tegenkamp, C. / Bipolar gating of epitaxial graphene by intercalation of Ge. I: Applied Physics Letters. 2014 ; Vol. 104, Nr. 26.

RIS

TY - JOUR

T1 - Bipolar gating of epitaxial graphene by intercalation of Ge

AU - Baringhaus, J.

AU - Stoehr, A.

AU - Forti, S.

AU - Krasnikov, S. A.

AU - Zakharov, Alexei

AU - Starke, U.

AU - Tegenkamp, C.

PY - 2014

Y1 - 2014

N2 - In this study, the ambivalent behavior of Ge intercalation is studied by means of scanning tunneling microscopy and spectroscopy as well as local 4-point probe transport measurements. In quantitative agreement with angle-resolved photoemission experiments, both p-and n-type doped graphene areas and their doping level were identified by local spectroscopy. The p-doped areas appear higher by 2 angstrom with respect to the n-doped areas suggesting incorporation of thicker Ge-layers accompanied by a modified coupling to the initial SiC-surface. Furthermore, the sheet resistance was measured on each of the patches separately. The intrinsic imbalance between the carrier types in the different areas is well reflected by the transport study. The process of intercalation does not affect the transport properties in comparison to pristine graphene pointing to a sufficient homogeneity of the decoupled graphene layer. Transport measurements across chemically gated pn-junctions reveal increased resistances, possibly due to enlarged tunneling barriers. (C) 2014 AIP Publishing LLC.

AB - In this study, the ambivalent behavior of Ge intercalation is studied by means of scanning tunneling microscopy and spectroscopy as well as local 4-point probe transport measurements. In quantitative agreement with angle-resolved photoemission experiments, both p-and n-type doped graphene areas and their doping level were identified by local spectroscopy. The p-doped areas appear higher by 2 angstrom with respect to the n-doped areas suggesting incorporation of thicker Ge-layers accompanied by a modified coupling to the initial SiC-surface. Furthermore, the sheet resistance was measured on each of the patches separately. The intrinsic imbalance between the carrier types in the different areas is well reflected by the transport study. The process of intercalation does not affect the transport properties in comparison to pristine graphene pointing to a sufficient homogeneity of the decoupled graphene layer. Transport measurements across chemically gated pn-junctions reveal increased resistances, possibly due to enlarged tunneling barriers. (C) 2014 AIP Publishing LLC.

U2 - 10.1063/1.4886411

DO - 10.1063/1.4886411

M3 - Article

VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 26

M1 - 261602

ER -