Capacitance Measurements in Vertical III-V Nanowire TFETs

Forskningsoutput: TidskriftsbidragLetter

Standard

Harvard

APA

CBE

MLA

Vancouver

Author

RIS

TY - JOUR

T1 - Capacitance Measurements in Vertical III-V Nanowire TFETs

AU - Hellenbrand, Markus

AU - Memisevic, Elvedin

AU - Svensson, Johannes

AU - Krishnaraja, Abinaya

AU - Lind, Erik

AU - Wernersson, Lars-Erik

PY - 2018/5/4

Y1 - 2018/5/4

N2 - By measuring scattering parameters over a wide range of bias points, we study the intrinsic gate capacitance as well as the charge partitioning of vertical nanowire tunnel field-effect transistors (TFETs). The gate-to-drain capacitance Cgd is found to largely dominate the on-state of TFETs, whereas the gate-to-source capacitance Cgs is sufficiently small to be completely dominated by parasitic components. This indicates that the tunnel junction on the source side almost completely decouples the channel charge from the small-signal variation in the source, while the absence of a tunnel junction on the drain side allows the channel charge to follow the drain small-signal variation much more directly.

AB - By measuring scattering parameters over a wide range of bias points, we study the intrinsic gate capacitance as well as the charge partitioning of vertical nanowire tunnel field-effect transistors (TFETs). The gate-to-drain capacitance Cgd is found to largely dominate the on-state of TFETs, whereas the gate-to-source capacitance Cgs is sufficiently small to be completely dominated by parasitic components. This indicates that the tunnel junction on the source side almost completely decouples the channel charge from the small-signal variation in the source, while the absence of a tunnel junction on the drain side allows the channel charge to follow the drain small-signal variation much more directly.

KW - Vertical Nanowires

KW - III-V

KW - TFET

KW - Small-signal model

KW - Intrinsic Capacitance

KW - RF

KW - Cgd

KW - Cgs

U2 - 10.1109/LED.2018.2833168

DO - 10.1109/LED.2018.2833168

M3 - Letter

VL - 39

SP - 943

EP - 946

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 7

ER -