Characterization of individual stacking faults in a wurtzite GaAs nanowire by nanobeam X-ray diffraction

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

Abstract

Coherent X-ray diffraction was used to measure the type, quantity and the relative distances between stacking faults along the growth direction of two individual wurtzite GaAs nanowires grown by metalorganic vapour epitaxy. The presented approach is based on the general property of the Patterson function, which is the autocorrelation of the electron density as well as the Fourier transformation of the diffracted intensity distribution of an object. Partial Patterson functions were extracted from the diffracted intensity measured along the direction in the vicinity of the wurtzite Bragg peak. The maxima of the Patterson function encode both the distances between the fault planes and the type of the fault planes with the sensitivity of a single atomic bilayer. The positions of the fault planes are deduced from the positions and shapes of the maxima of the Patterson function and they are in excellent agreement with the positions found with transmission electron microscopy of the same nanowire.The application of the synchrotron-radiation-based coherent nanobeam X-ray diffraction method to study the type, quantity and the exact distances in between stacking faults in single GaAs nanowires is demonstrated.

Detaljer

Författare
Enheter & grupper
Externa organisationer
  • University of Siegen
  • Charles University in Prague
  • European Synchrotron Radiation Facility
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Den kondenserade materiens fysik

Nyckelord

Originalspråkengelska
Sidor (från-till)981-990
Antal sidor10
TidskriftJournal of Synchrotron Radiation
Volym24
Utgåva nummer5
StatusPublished - 2017 sep 1
PublikationskategoriForskning
Peer review utfördJa