Comparing Hall Effect and Field Effect Measurements on the Same Single Nanowire

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

Abstract

We compare and discuss the two most commonly used electrical characterization techniques for nanowires (NWs). In a novel single-NW device, we combine Hall effect and back-gated and top-gated field effect measurements and quantify the carrier concentrations in a series of sulfur-doped InP NWs. The carrier concentrations from Hall effect and field effect measurements are found to correlate well when using the analysis methods described in this work. This shows that NWs can be accurately characterized with available electrical methods, an important result toward better understanding of semiconductor NW doping.

Detaljer

Författare
Enheter & grupper
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Nanoteknik

Nyckelord

Originalspråkengelska
Sidor (från-till)205-211
TidskriftNano Letters
Volym16
Utgivningsnummer1
StatusPublished - 2016
PublikationskategoriForskning
Peer review utfördJa

Relaterad forskningsoutput

Hultin, O., 2018 apr 18, Division of Solid State Physics, Department of Physics, Lund University, Box 118, SE-221 00 Lund, Sweden,.

Forskningsoutput: AvhandlingDoktorsavhandling (sammanläggning)

Otnes, G., 2018, Department of Physics, Lund University.

Forskningsoutput: AvhandlingDoktorsavhandling (sammanläggning)

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