Continuous wafer-scale graphene on cubic-SiC(001)

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Continuous wafer-scale graphene on cubic-SiC(001). / Chaika, Alexander N.; Molodtsova, Olga V.; Zakharov, Alexei; Marchenko, Dmitry; Sanchez-Barriga, Jaime; Varykhalov, Andrei; Shvets, Igor V.; Aristov, Victor Yu.

I: Nano Reseach, Vol. 6, Nr. 8, 2013, s. 562-570.

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

Harvard

Chaika, AN, Molodtsova, OV, Zakharov, A, Marchenko, D, Sanchez-Barriga, J, Varykhalov, A, Shvets, IV & Aristov, VY 2013, 'Continuous wafer-scale graphene on cubic-SiC(001)', Nano Reseach, vol. 6, nr. 8, s. 562-570. https://doi.org/10.1007/s12274-013-0331-9

APA

Chaika, A. N., Molodtsova, O. V., Zakharov, A., Marchenko, D., Sanchez-Barriga, J., Varykhalov, A., ... Aristov, V. Y. (2013). Continuous wafer-scale graphene on cubic-SiC(001). Nano Reseach, 6(8), 562-570. https://doi.org/10.1007/s12274-013-0331-9

CBE

Chaika AN, Molodtsova OV, Zakharov A, Marchenko D, Sanchez-Barriga J, Varykhalov A, Shvets IV, Aristov VY. 2013. Continuous wafer-scale graphene on cubic-SiC(001). Nano Reseach. 6(8):562-570. https://doi.org/10.1007/s12274-013-0331-9

MLA

Vancouver

Chaika AN, Molodtsova OV, Zakharov A, Marchenko D, Sanchez-Barriga J, Varykhalov A et al. Continuous wafer-scale graphene on cubic-SiC(001). Nano Reseach. 2013;6(8):562-570. https://doi.org/10.1007/s12274-013-0331-9

Author

Chaika, Alexander N. ; Molodtsova, Olga V. ; Zakharov, Alexei ; Marchenko, Dmitry ; Sanchez-Barriga, Jaime ; Varykhalov, Andrei ; Shvets, Igor V. ; Aristov, Victor Yu. / Continuous wafer-scale graphene on cubic-SiC(001). I: Nano Reseach. 2013 ; Vol. 6, Nr. 8. s. 562-570.

RIS

TY - JOUR

T1 - Continuous wafer-scale graphene on cubic-SiC(001)

AU - Chaika, Alexander N.

AU - Molodtsova, Olga V.

AU - Zakharov, Alexei

AU - Marchenko, Dmitry

AU - Sanchez-Barriga, Jaime

AU - Varykhalov, Andrei

AU - Shvets, Igor V.

AU - Aristov, Victor Yu.

PY - 2013

Y1 - 2013

N2 - The atomic and electronic structure of graphene synthesized on commercially available cubic-SiC(001)/Si(001) wafers have been studied by low energy electron microscopy (LEEM), scanning tunneling microscopy (STM), low energy electron diffraction (LEED), and angle resolved photoelectron spectroscopy (ARPES). LEEM and STM data prove the wafer-scale continuity and uniform thickness of the graphene overlayer on SiC(001). LEEM, STM and ARPES studies reveal that the graphene overlayer on SiC(001) consists of only a few monolayers with physical properties of quasi-freestanding graphene. Atomically resolved STM and micro-LEED data show that the top graphene layer consists of nanometersized domains with four different lattice orientations connected through the aOE (c) 110 >-directed boundaries. ARPES studies reveal the typical electron spectrum of graphene with the Dirac points close to the Fermi level. Thus, the use of technologically relevant SiC(001)/Si(001) wafers for graphene fabrication represents a realistic way of bridging the gap between the outstanding properties of graphene and their applications.

AB - The atomic and electronic structure of graphene synthesized on commercially available cubic-SiC(001)/Si(001) wafers have been studied by low energy electron microscopy (LEEM), scanning tunneling microscopy (STM), low energy electron diffraction (LEED), and angle resolved photoelectron spectroscopy (ARPES). LEEM and STM data prove the wafer-scale continuity and uniform thickness of the graphene overlayer on SiC(001). LEEM, STM and ARPES studies reveal that the graphene overlayer on SiC(001) consists of only a few monolayers with physical properties of quasi-freestanding graphene. Atomically resolved STM and micro-LEED data show that the top graphene layer consists of nanometersized domains with four different lattice orientations connected through the aOE (c) 110 >-directed boundaries. ARPES studies reveal the typical electron spectrum of graphene with the Dirac points close to the Fermi level. Thus, the use of technologically relevant SiC(001)/Si(001) wafers for graphene fabrication represents a realistic way of bridging the gap between the outstanding properties of graphene and their applications.

KW - graphene

KW - cubic-SiC(001)

KW - STM

KW - ARPES

KW - LEEM

KW - LEED

U2 - 10.1007/s12274-013-0331-9

DO - 10.1007/s12274-013-0331-9

M3 - Article

VL - 6

SP - 562

EP - 570

JO - Nano Reseach

T2 - Nano Reseach

JF - Nano Reseach

SN - 1998-0124

IS - 8

ER -