Controlling the growth of epitaxial graphene on metalized diamond (111) surface

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Controlling the growth of epitaxial graphene on metalized diamond (111) surface. / Cooil, S. P.; Wells, J. W.; Hu, D.; Niu, Yuran; Zakharov, Alexei; Bianchi, M.; Evans, D. A.

I: Applied Physics Letters, Vol. 107, Nr. 18, 181603, 2015.

Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

Harvard

Cooil, SP, Wells, JW, Hu, D, Niu, Y, Zakharov, A, Bianchi, M & Evans, DA 2015, 'Controlling the growth of epitaxial graphene on metalized diamond (111) surface', Applied Physics Letters, vol. 107, nr. 18, 181603. https://doi.org/10.1063/1.4935073

APA

Cooil, S. P., Wells, J. W., Hu, D., Niu, Y., Zakharov, A., Bianchi, M., & Evans, D. A. (2015). Controlling the growth of epitaxial graphene on metalized diamond (111) surface. Applied Physics Letters, 107(18), [181603]. https://doi.org/10.1063/1.4935073

CBE

Cooil SP, Wells JW, Hu D, Niu Y, Zakharov A, Bianchi M, Evans DA. 2015. Controlling the growth of epitaxial graphene on metalized diamond (111) surface. Applied Physics Letters. 107(18):Article 181603. https://doi.org/10.1063/1.4935073

MLA

Cooil, S. P. et al. "Controlling the growth of epitaxial graphene on metalized diamond (111) surface". Applied Physics Letters. 2015. 107(18). https://doi.org/10.1063/1.4935073

Vancouver

Cooil SP, Wells JW, Hu D, Niu Y, Zakharov A, Bianchi M et al. Controlling the growth of epitaxial graphene on metalized diamond (111) surface. Applied Physics Letters. 2015;107(18). 181603. https://doi.org/10.1063/1.4935073

Author

Cooil, S. P. ; Wells, J. W. ; Hu, D. ; Niu, Yuran ; Zakharov, Alexei ; Bianchi, M. ; Evans, D. A. / Controlling the growth of epitaxial graphene on metalized diamond (111) surface. I: Applied Physics Letters. 2015 ; Vol. 107, Nr. 18.

RIS

TY - JOUR

T1 - Controlling the growth of epitaxial graphene on metalized diamond (111) surface

AU - Cooil, S. P.

AU - Wells, J. W.

AU - Hu, D.

AU - Niu, Yuran

AU - Zakharov, Alexei

AU - Bianchi, M.

AU - Evans, D. A.

PY - 2015

Y1 - 2015

N2 - The 2-dimensional transformation of the diamond (111) surface to graphene has been demonstrated using ultrathin Fe films that catalytically reduce the reaction temperature needed for the conversion of sp(3) to sp(2) carbon. An epitaxial system is formed, which involves the re-crystallization of carbon at the Fe/vacuum interface and that enables the controlled growth of monolayer and multilayer graphene films. In order to study the initial stages of single and multilayer graphene growth, real time monitoring of the system was preformed within a photoemission and low energy electron microscope. It was found that the initial graphene growth occurred at temperatures as low as 500 degrees C, whilst increasing the temperature to 560 degrees C was required to produce multi-layer graphene of high structural quality. Angle resolved photoelectron spectroscopy was used to study the electronic properties of the grown material, where a graphene-like energy momentum dispersion was observed. The Dirac point for the first layer is located at 2.5 eV below the Fermi level, indicating an n-type doping of the graphene due to substrate interactions, while that of the second graphene layer lies close to the Fermi level. (C) 2015 AIP Publishing LLC.

AB - The 2-dimensional transformation of the diamond (111) surface to graphene has been demonstrated using ultrathin Fe films that catalytically reduce the reaction temperature needed for the conversion of sp(3) to sp(2) carbon. An epitaxial system is formed, which involves the re-crystallization of carbon at the Fe/vacuum interface and that enables the controlled growth of monolayer and multilayer graphene films. In order to study the initial stages of single and multilayer graphene growth, real time monitoring of the system was preformed within a photoemission and low energy electron microscope. It was found that the initial graphene growth occurred at temperatures as low as 500 degrees C, whilst increasing the temperature to 560 degrees C was required to produce multi-layer graphene of high structural quality. Angle resolved photoelectron spectroscopy was used to study the electronic properties of the grown material, where a graphene-like energy momentum dispersion was observed. The Dirac point for the first layer is located at 2.5 eV below the Fermi level, indicating an n-type doping of the graphene due to substrate interactions, while that of the second graphene layer lies close to the Fermi level. (C) 2015 AIP Publishing LLC.

U2 - 10.1063/1.4935073

DO - 10.1063/1.4935073

M3 - Article

VL - 107

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 18

M1 - 181603

ER -