Defect evaluation in InGaAs field effect transistors with HfO2 or Al2O3 dielectric

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Defect evaluation in InGaAs field effect transistors with HfO2 or Al2O3 dielectric. / Roll, Guntrade; Mo, Jiongjiong; Lind, Erik; Johansson, Sofia; Wernersson, Lars-Erik.

I: Applied Physics Letters, Vol. 106, Nr. 20, 203503, 2015.

Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

Harvard

Roll, G, Mo, J, Lind, E, Johansson, S & Wernersson, L-E 2015, 'Defect evaluation in InGaAs field effect transistors with HfO2 or Al2O3 dielectric', Applied Physics Letters, vol. 106, nr. 20, 203503. https://doi.org/10.1063/1.4921483

APA

Roll, G., Mo, J., Lind, E., Johansson, S., & Wernersson, L-E. (2015). Defect evaluation in InGaAs field effect transistors with HfO2 or Al2O3 dielectric. Applied Physics Letters, 106(20), [203503]. https://doi.org/10.1063/1.4921483

CBE

Roll G, Mo J, Lind E, Johansson S, Wernersson L-E. 2015. Defect evaluation in InGaAs field effect transistors with HfO2 or Al2O3 dielectric. Applied Physics Letters. 106(20):Article 203503. https://doi.org/10.1063/1.4921483

MLA

Roll, Guntrade et al. "Defect evaluation in InGaAs field effect transistors with HfO2 or Al2O3 dielectric". Applied Physics Letters. 2015. 106(20). https://doi.org/10.1063/1.4921483

Vancouver

Roll G, Mo J, Lind E, Johansson S, Wernersson L-E. Defect evaluation in InGaAs field effect transistors with HfO2 or Al2O3 dielectric. Applied Physics Letters. 2015;106(20). 203503. https://doi.org/10.1063/1.4921483

Author

Roll, Guntrade ; Mo, Jiongjiong ; Lind, Erik ; Johansson, Sofia ; Wernersson, Lars-Erik. / Defect evaluation in InGaAs field effect transistors with HfO2 or Al2O3 dielectric. I: Applied Physics Letters. 2015 ; Vol. 106, Nr. 20.

RIS

TY - JOUR

T1 - Defect evaluation in InGaAs field effect transistors with HfO2 or Al2O3 dielectric

AU - Roll, Guntrade

AU - Mo, Jiongjiong

AU - Lind, Erik

AU - Johansson, Sofia

AU - Wernersson, Lars-Erik

PY - 2015

Y1 - 2015

N2 - The performance of InGaAs metal oxide semiconductor field effect transistors with Al2O3 or HfO2 as gate oxide is evaluated and compared. The Al2O3 transistors show the lowest subthreshold slope and mid gap D-it, however, the HfO2 transistors reach a higher maximum transconductance (g(max)) due to the higher oxide capacitance. Both high-kappa dielectrics show a g(m)-frequency dispersion due to tunneling into border traps with a negligible activation energy as determined from temperature dependent measurements. The total amount of trapped charge at border traps is lower in the HfO2 devices. Scaling the HfO2 thickness further reduces the g(m)-frequency dispersion, possibly due to detrapping to the gate electrode. (C) 2015 AIP Publishing LLC.

AB - The performance of InGaAs metal oxide semiconductor field effect transistors with Al2O3 or HfO2 as gate oxide is evaluated and compared. The Al2O3 transistors show the lowest subthreshold slope and mid gap D-it, however, the HfO2 transistors reach a higher maximum transconductance (g(max)) due to the higher oxide capacitance. Both high-kappa dielectrics show a g(m)-frequency dispersion due to tunneling into border traps with a negligible activation energy as determined from temperature dependent measurements. The total amount of trapped charge at border traps is lower in the HfO2 devices. Scaling the HfO2 thickness further reduces the g(m)-frequency dispersion, possibly due to detrapping to the gate electrode. (C) 2015 AIP Publishing LLC.

U2 - 10.1063/1.4921483

DO - 10.1063/1.4921483

M3 - Article

VL - 106

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 20

M1 - 203503

ER -