Defect-free InP nanowires grown in [001] direction on InP(001)

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Abstract

We report on [001] InP nanowires grown by metalorganic vapor phase epitaxy directly on (001) InP substrates. Characterization by scanning electron microscopy and transmission electron microscopy reveals wires with nearly square cross sections and a perfect zinc-blende crystalline structure that is free of stacking faults. Photoluminescence measurements of single [001] nanowires exhibit a narrow and intense emission peak at approximately 1.4 eV, whereas <111>B grown reference wires show additional broad luminescence peaks at lower energy. The origin of this uncommon wire growth direction [001] is discussed as a means of controlled formation of [00l]-oriented nanowires on (001) substrates. (C) 2004 American Institute of Physics.

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Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Kemi
  • Den kondenserade materiens fysik
Originalspråkengelska
Sidor (från-till)2077-2079
TidskriftApplied Physics Letters
Volym85
Utgåva nummer11
StatusPublished - 2004
PublikationskategoriForskning
Peer review utfördJa