Defect-free SnTe topological crystalline insulator nanowires grown by molecular beam epitaxy on graphene

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

Abstract

SnTe topological crystalline insulator nanowires have been grown by molecular beam epitaxy on graphene/SiC substrates. The nanowires have a cubic rock-salt structure, they grow along the [001] crystallographic direction and have four sidewalls consisting of {100} crystal planes known to host metallic surface states with a Dirac dispersion. Thorough high resolution transmission electron microscopy investigations show that the nanowires grow on graphene in the van der Waals epitaxy mode induced when the catalyzing Au nanoparticles mix with Sn delivered from a SnTe flux, providing a liquid Au-Sn alloy. The nanowires are totally free from structural defects, but their {001} sidewalls are prone to oxidation, which points out the necessity of depositing a protective capping layer in view of exploiting the magneto-electric transport phenomena involving charge carriers occupying topologically protected states.

Detaljer

Författare
  • Janusz Sadowski
  • Piotr Dziawa
  • Anna Kaleta
  • Bogusława Kurowska
  • Anna Reszka
  • Tomasz Story
  • Sławomir Kret
Enheter & grupper
Externa organisationer
  • Linnaeus University
  • Institute of Physics PAS
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Den kondenserade materiens fysik
  • Nanoteknik
Originalspråkengelska
Sidor (från-till)20772-20778
Antal sidor7
TidskriftNanoscale
Volym10
Utgivningsnummer44
StatusPublished - 2018
PublikationskategoriForskning
Peer review utfördJa