Degenerate p-doping of InP nanowires for large area tunnel diodes

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

Abstract

We have investigated p-doping of InP nanowires using diethyl zinc. Two-terminal devices showed non-linear source-drain characteristics and p-type gate dependence. Electron beam induced current measurements were employed to determine minority carrier diffusion lengths. We used large-area tunnel diodes to demonstrate degenerate doping, showing peak current densities of up to 0.11 A/cm(2) and room temperature peak to valley current ratios of 5.3. These results demonstrate that high p- and n-doping, paired with sharp doping profiles, can be achieved in InP nanowires. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3669697]

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Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Kemi
  • Den kondenserade materiens fysik
Originalspråkengelska
Artikelnummer253105
TidskriftApplied Physics Letters
Volym99
Utgåva nummer25
StatusPublished - 2011
PublikationskategoriForskning
Peer review utfördJa

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Jesper Wallentin, 2012, Lund University. 183 s.

Forskningsoutput: AvhandlingDoktorsavhandling (sammanläggning)

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