Detection of charge states in nanowire quantum dots using a quantum point contact

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Abstract

The authors demonstrate operation of a charge readout scheme for quantum dots in a semiconductor
nanowire using a quantum point contact defined in a GaAs/AlGaAs two-dimensional electron gas
beneath the nanowire. The quantum dots were fabricated by epitaxial growth of InP barriers along
a n-type InAs nanowire. Applying negative voltages to two split-gate electrodes aligned to the
nanowire induces a quantum point contact in the two-dimensional electron gas such that charging of
quantum dots in the nanowire modulates the quantum point contact transmission, thus resulting in
the desired detector response.

Detaljer

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Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Den kondenserade materiens fysik
Originalspråkengelska
Artikelnummer172112
TidskriftApplied Physics Letters
Volym90
StatusPublished - 2007
PublikationskategoriForskning
Peer review utfördJa