Diode and transistor behaviors of three-terminal ballistic junctions

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We propose new applications of three-terminal ballistic junctions (TBJs) in nanoelectronics. It is found that for a TBJ with one of its three branch contacts, say the right branch contact, being grounded, the output voltage, V-c, from the central branch as a function of the voltage, Vl, applied to the left branch shows a diode characteristic: V-c approximately follows Vl linearly when Vl is negative, and saturates at a small positive value when Vl becomes positive. It is also found that the saturation level of V-c as well as the threshold value of Vl, beyond which V-c saturates, can be modulated by application of a voltage, V-r, to the right branch contact of the TBJ. Thus, the TBJ can also be used as a transistor. TBJ diodes and TBJ transistors with dimensions on the order of sub 100 nm, or much less, can be made from standard high-quality electronic materials with state-of-the-art nanofabrication technology.


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Sidor (från-till)853-855
TidskriftApplied Physics Letters
Utgåva nummer5
StatusPublished - 2002
Peer review utfördJa