Doping GaP Core-Shell Nanowire pn-Junctions: A Study by Off-Axis Electron Holography

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

Standard

Doping GaP Core-Shell Nanowire pn-Junctions: A Study by Off-Axis Electron Holography. / Yazdi, Sadegh; Berg, Alexander; Borgström, Magnus; Kasama, Takeshi; Beleggia, Marco; Samuelson, Lars; Wagner, Jakob B.

I: Small, Vol. 11, Nr. 22, 2015, s. 2687-2695.

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

Harvard

APA

CBE

MLA

Vancouver

Author

Yazdi, Sadegh ; Berg, Alexander ; Borgström, Magnus ; Kasama, Takeshi ; Beleggia, Marco ; Samuelson, Lars ; Wagner, Jakob B. / Doping GaP Core-Shell Nanowire pn-Junctions: A Study by Off-Axis Electron Holography. I: Small. 2015 ; Vol. 11, Nr. 22. s. 2687-2695.

RIS

TY - JOUR

T1 - Doping GaP Core-Shell Nanowire pn-Junctions: A Study by Off-Axis Electron Holography

AU - Yazdi, Sadegh

AU - Berg, Alexander

AU - Borgström, Magnus

AU - Kasama, Takeshi

AU - Beleggia, Marco

AU - Samuelson, Lars

AU - Wagner, Jakob B.

PY - 2015

Y1 - 2015

N2 - The doping process in GaP core-shell nanowire pn-junctions using different precursors is evaluated by mapping the nanowires' electrostatic potential distribution by means of off-axis electron holography. Three precursors, triethyltin (TESn), ditertiarybutylselenide, and silane are investigated for n-type doping of nanowire shells; among them, TESn is shown to be the most efficient precursor. Off-axis electron holography reveals higher electrostatic potentials in the regions of nanowire cores grown by the vapor-liquid-solid (VLS) mechanism (axial growth) than the regions grown parasitically by the vapor-solid (VS) mechanism (radial growth), attributed to different incorporation efficiency between VLS and VS of unintentional p-type carbon doping originating from the trimethylgallium precursor. This study shows that off-axis electron holography of doped nanowires is unique in terms of the ability to map the electrostatic potential and thereby the active dopant distribution with high spatial resolution.

AB - The doping process in GaP core-shell nanowire pn-junctions using different precursors is evaluated by mapping the nanowires' electrostatic potential distribution by means of off-axis electron holography. Three precursors, triethyltin (TESn), ditertiarybutylselenide, and silane are investigated for n-type doping of nanowire shells; among them, TESn is shown to be the most efficient precursor. Off-axis electron holography reveals higher electrostatic potentials in the regions of nanowire cores grown by the vapor-liquid-solid (VLS) mechanism (axial growth) than the regions grown parasitically by the vapor-solid (VS) mechanism (radial growth), attributed to different incorporation efficiency between VLS and VS of unintentional p-type carbon doping originating from the trimethylgallium precursor. This study shows that off-axis electron holography of doped nanowires is unique in terms of the ability to map the electrostatic potential and thereby the active dopant distribution with high spatial resolution.

KW - core-shell nanowires

KW - nanowires

KW - doping

KW - electrostatic potential

KW - potential maps

KW - gallium phosphide

KW - electron holography

U2 - 10.1002/smll.201403361

DO - 10.1002/smll.201403361

M3 - Article

VL - 11

SP - 2687

EP - 2695

JO - Small

T2 - Small

JF - Small

SN - 1613-6829

IS - 22

ER -