Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films

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Abstract

We report a clear correspondence between changes in the Curie temperature and carrier density upon annealing in epitaxially grown (Ga,Mn)As layers with thicknesses in the range between 5 and 20 nm. The changes are dependent on the layer thickness, indicating that the (Ga,Mn)As-GaAs interface has importance for the physical properties of the (Ga,Mn)As layer. The magnetoresistance shows additional features when compared to thick (Ga,Mn)As layers, that are at present of unknown origin. (C) 2003 American Institute of Physics.

Detaljer

Författare
  • BS Sorensen
  • PE Lindelof
  • Janusz Sadowski
  • R Mathieu
  • P Svedlindh
Enheter & grupper
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Fysik
  • Naturvetenskap
Originalspråkengelska
Sidor (från-till)2287-2289
TidskriftApplied Physics Letters
Volym82
Utgåva nummer14
StatusPublished - 2003
PublikationskategoriForskning
Peer review utfördJa