Effect of Gate Oxide Defects on Tunnel Transistor RF Performance

Forskningsoutput: Kapitel i bok/rapport/Conference proceedingKonferenspaper i proceeding

Abstract

Tunnel field-effect transistors (TFETs) are designed for low off-state leakage and low drive voltages. To investigate how capable TFETs are of RF operation, we measured their scattering parameters and performed small-signal modeling. We find that in the low frequency ranges, gate oxide defects have a major influence on the RF performance of these devices, which can be modeled by a frequency-dependent gate-to-drain conductance ggd;w. This model is based on charge trapping in gate oxide defects and was studied before for metal-oxide-semiconductor capacitors.

Detaljer

Författare
Enheter & grupper
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Nanoteknik
Originalspråkengelska
Titel på värdpublikation 2018 76th Device Research Conference (DRC)
FörlagIEEE - Institute of Electrical and Electronics Engineers Inc.
Sidor137-138
Antal sidor2
ISBN (elektroniskt)978-1-5386-3028-0
StatusPublished - 2018 jun 25
PublikationskategoriForskning
Peer review utfördNej
Evenemang76th Device Research Conference - University of California Santa Barbara, Santa Barbara, USA
Varaktighet: 2018 jul 242018 jul 27

Konferens

Konferens76th Device Research Conference
LandUSA
OrtSanta Barbara
Period2018/07/242018/07/27

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