Effects of Supersaturation on the Crystal Structure of Gold Seeded III-V Nanowires

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

Standard

Effects of Supersaturation on the Crystal Structure of Gold Seeded III-V Nanowires. / Johansson, Jonas; Karlsson, Lisa; Dick Thelander, Kimberly; Bolinsson, Jessica; Wacaser, Brent; Deppert, Knut; Samuelson, Lars.

I: Crystal Growth & Design, Vol. 9, Nr. 2, 2009, s. 766-773.

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

Harvard

APA

CBE

MLA

Vancouver

Author

RIS

TY - JOUR

T1 - Effects of Supersaturation on the Crystal Structure of Gold Seeded III-V Nanowires

AU - Johansson, Jonas

AU - Karlsson, Lisa

AU - Dick Thelander, Kimberly

AU - Bolinsson, Jessica

AU - Wacaser, Brent

AU - Deppert, Knut

AU - Samuelson, Lars

N1 - The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)

PY - 2009

Y1 - 2009

N2 - We present results that provide fundamental insights on how to experimentally tailor the planar defect density and even the crystal structure in III-V metal particle seeded nanowires, where zinc blende is the stable bulk crystal structure. We have grown GaP nanowires with metal-organic vapor phase epitaxy under different conditions: pulsing of the Ga source, and continuous growth with and without In background. The dominant crystal structure of the nanowires is zinc blende, which when grown under continuous conditions has a high density of twin planes perpendicular to the growth direction. Using pulsed growth, we observed that the twin plane separations were much longer than those observed for continuous growth with an In background. On the other hand, during continuous growth, under In-free conditions, a considerable amount of the wurtzite phase forms. We explain the importance of the In background during growth. With classical nucleation modeling we qualitatively relate the density of planar defects in a nanowire to the growth conditions. For low supersaturations, we predict a low twin plane density, consistent with our experimental observations of pulsed nanowire growth. In addition, we suggest that under certain conditions, it might be possible to grow wires with almost perfect wurtzite structure.

AB - We present results that provide fundamental insights on how to experimentally tailor the planar defect density and even the crystal structure in III-V metal particle seeded nanowires, where zinc blende is the stable bulk crystal structure. We have grown GaP nanowires with metal-organic vapor phase epitaxy under different conditions: pulsing of the Ga source, and continuous growth with and without In background. The dominant crystal structure of the nanowires is zinc blende, which when grown under continuous conditions has a high density of twin planes perpendicular to the growth direction. Using pulsed growth, we observed that the twin plane separations were much longer than those observed for continuous growth with an In background. On the other hand, during continuous growth, under In-free conditions, a considerable amount of the wurtzite phase forms. We explain the importance of the In background during growth. With classical nucleation modeling we qualitatively relate the density of planar defects in a nanowire to the growth conditions. For low supersaturations, we predict a low twin plane density, consistent with our experimental observations of pulsed nanowire growth. In addition, we suggest that under certain conditions, it might be possible to grow wires with almost perfect wurtzite structure.

U2 - 10.1021/cg800270q

DO - 10.1021/cg800270q

M3 - Article

VL - 9

SP - 766

EP - 773

JO - Crystal Growth and Design

JF - Crystal Growth and Design

SN - 1528-7483

IS - 2

ER -