Electrical properties and logic function of multibranch junction structures

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Electrical properties and logic function of multibranch junction structures. / Wallin, Daniel; Xu, Hongqi.

I: Applied Physics Letters, Vol. 86, Nr. 25, 253515, 2005.

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

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TY - JOUR

T1 - Electrical properties and logic function of multibranch junction structures

AU - Wallin, Daniel

AU - Xu, Hongqi

PY - 2005

Y1 - 2005

N2 - We report on room-temperature electrical measurements of multibranch junction (MBJ) devices made from a semiconductor heterostructure. We show that the MBJ devices exhibit an interesting electrical property. If the voltage output at one branch is measured as a function of the voltages inputs to all the other branches, the output voltage is determined predominately by the most negative, or the lowest, voltage applied. The property arises from the nature of the voltage-induced ballistic electron transport in the MBJ device, and can in general be observed in other nanoscale MBJ structures. We also demonstrate the realization of very compact multi-input logic gates with the MBJ structures.

AB - We report on room-temperature electrical measurements of multibranch junction (MBJ) devices made from a semiconductor heterostructure. We show that the MBJ devices exhibit an interesting electrical property. If the voltage output at one branch is measured as a function of the voltages inputs to all the other branches, the output voltage is determined predominately by the most negative, or the lowest, voltage applied. The property arises from the nature of the voltage-induced ballistic electron transport in the MBJ device, and can in general be observed in other nanoscale MBJ structures. We also demonstrate the realization of very compact multi-input logic gates with the MBJ structures.

U2 - 10.1063/1.1952579

DO - 10.1063/1.1952579

M3 - Article

VL - 86

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 25

M1 - 253515

ER -