Electronic properties of vacancy-oxygen complex in Ge crystals

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

Abstract

It is argued that the vacancy-oxygen (VO) complex (A center) in Ge has three charge states: double negative, single negative, and neutral. Corresponding energy levels are located at E-c-0.21 eV (VO--/-) and E-v+0.27 eV (VO-/0). An absorption line at 716 cm(-1) has been assigned to the asymmetrical stretching vibration mode of the doubly negatively charged VO complex. (C) 2002 American Institute of Physics.

Detaljer

Författare
  • VP Markevich
  • ID Hawkins
  • AR Peaker
  • VV Litvinov
  • LI Murin
  • L Dobaczewski
  • Lennart Lindström
Enheter & grupper
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Den kondenserade materiens fysik
Originalspråkengelska
Sidor (från-till)1821-1823
TidskriftApplied Physics Letters
Volym81
Utgåva nummer10
StatusPublished - 2002
PublikationskategoriForskning
Peer review utfördJa