Enhanced Zeeman splitting in Ga0.25In0.75As quantum point contacts

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Abstract

The strength of the Zeeman splitting induced by an applied magnetic field is an important factor for the realization of spin-resolved transport in mesoscopic devices. We measure the Zeeman splitting for a quantum point contact etched into a Ga0.25In0.75As quantum well, with the field oriented parallel to the transport direction. We observe an enhancement of the Lande g-factor from vertical bar g*vertical bar=3.8 +/- 0.2 for the third subband to vertical bar g*vertical bar=5.8 +/- 0.6 for the first subband, six times larger than in GaAs. We report subband spacings in excess of 10 meV, which facilitates quantum transport at higher temperatures. (C) 2008 American Institute of Physics.

Detaljer

Författare
  • T. P. Martin
  • A. Szorkovszky
  • A. P. Micolich
  • A. R. Hamilton
  • C. A. Marlow
  • H. Linke
  • R. P. Taylor
  • Lars Samuelson
Enheter & grupper
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Den kondenserade materiens fysik
Originalspråkengelska
Artikelnummer012105
TidskriftApplied Physics Letters
Volym93
Utgåva nummer1
StatusPublished - 2008
PublikationskategoriForskning
Peer review utfördJa