Ferromagnetism and the electronic band structure in (Ga,Mn)(Bi,As) epitaxial layers

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Abstract

Impact of Bi incorporation into (Ga,Mn)As layers on their electronic-and band-structures as well as their magnetic and structural properties has been studied. Homogenous (Ga,Mn)(Bi,As) layers of high structural perfection have been grown by the low-temperature molecular-beam epitaxy technique. Post-growth annealing treatment of the layers results in an improvement of their structural and magnetic properties and an increase in the hole concentration in the layers. The modulation photoreflectance spectroscopy results are consistent with the valence-band model of hole-mediated ferromagnetism in the layers. This material combines the properties of (Ga,Mn)As and Ga(Bi,As) ternary compounds and offers the possibility of tuning its electrical and magnetic properties by controlling the alloy composition. (C) 2014 AIP Publishing LLC.

Detaljer

Författare
  • O. Yastrubchak
  • Janusz Sadowski
  • L. Gluba
  • J. Z. Domagala
  • M. Rawski
  • J. Zuk
  • M. Kulik
  • T. Andrearczyk
  • T. Wosinski
Enheter & grupper
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Naturvetenskap
  • Fysik
Originalspråkengelska
Artikelnummer072402
TidskriftApplied Physics Letters
Volym105
Utgåva nummer7
StatusPublished - 2014
PublikationskategoriForskning
Peer review utfördJa