Ferromagnetism and the electronic band structure in (Ga,Mn)(Bi,As) epitaxial layers

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Ferromagnetism and the electronic band structure in (Ga,Mn)(Bi,As) epitaxial layers. / Yastrubchak, O.; Sadowski, Janusz; Gluba, L.; Domagala, J. Z.; Rawski, M.; Zuk, J.; Kulik, M.; Andrearczyk, T.; Wosinski, T.

I: Applied Physics Letters, Vol. 105, Nr. 7, 072402, 2014.

Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift

Harvard

Yastrubchak, O, Sadowski, J, Gluba, L, Domagala, JZ, Rawski, M, Zuk, J, Kulik, M, Andrearczyk, T & Wosinski, T 2014, 'Ferromagnetism and the electronic band structure in (Ga,Mn)(Bi,As) epitaxial layers', Applied Physics Letters, vol. 105, nr. 7, 072402. https://doi.org/10.1063/1.4893381

APA

Yastrubchak, O., Sadowski, J., Gluba, L., Domagala, J. Z., Rawski, M., Zuk, J., Kulik, M., Andrearczyk, T., & Wosinski, T. (2014). Ferromagnetism and the electronic band structure in (Ga,Mn)(Bi,As) epitaxial layers. Applied Physics Letters, 105(7), [072402]. https://doi.org/10.1063/1.4893381

CBE

Yastrubchak O, Sadowski J, Gluba L, Domagala JZ, Rawski M, Zuk J, Kulik M, Andrearczyk T, Wosinski T. 2014. Ferromagnetism and the electronic band structure in (Ga,Mn)(Bi,As) epitaxial layers. Applied Physics Letters. 105(7):Article 072402. https://doi.org/10.1063/1.4893381

MLA

Yastrubchak, O. et al. "Ferromagnetism and the electronic band structure in (Ga,Mn)(Bi,As) epitaxial layers". Applied Physics Letters. 2014. 105(7). https://doi.org/10.1063/1.4893381

Vancouver

Yastrubchak O, Sadowski J, Gluba L, Domagala JZ, Rawski M, Zuk J et al. Ferromagnetism and the electronic band structure in (Ga,Mn)(Bi,As) epitaxial layers. Applied Physics Letters. 2014;105(7). 072402. https://doi.org/10.1063/1.4893381

Author

Yastrubchak, O. ; Sadowski, Janusz ; Gluba, L. ; Domagala, J. Z. ; Rawski, M. ; Zuk, J. ; Kulik, M. ; Andrearczyk, T. ; Wosinski, T. / Ferromagnetism and the electronic band structure in (Ga,Mn)(Bi,As) epitaxial layers. I: Applied Physics Letters. 2014 ; Vol. 105, Nr. 7.

RIS

TY - JOUR

T1 - Ferromagnetism and the electronic band structure in (Ga,Mn)(Bi,As) epitaxial layers

AU - Yastrubchak, O.

AU - Sadowski, Janusz

AU - Gluba, L.

AU - Domagala, J. Z.

AU - Rawski, M.

AU - Zuk, J.

AU - Kulik, M.

AU - Andrearczyk, T.

AU - Wosinski, T.

PY - 2014

Y1 - 2014

N2 - Impact of Bi incorporation into (Ga,Mn)As layers on their electronic-and band-structures as well as their magnetic and structural properties has been studied. Homogenous (Ga,Mn)(Bi,As) layers of high structural perfection have been grown by the low-temperature molecular-beam epitaxy technique. Post-growth annealing treatment of the layers results in an improvement of their structural and magnetic properties and an increase in the hole concentration in the layers. The modulation photoreflectance spectroscopy results are consistent with the valence-band model of hole-mediated ferromagnetism in the layers. This material combines the properties of (Ga,Mn)As and Ga(Bi,As) ternary compounds and offers the possibility of tuning its electrical and magnetic properties by controlling the alloy composition. (C) 2014 AIP Publishing LLC.

AB - Impact of Bi incorporation into (Ga,Mn)As layers on their electronic-and band-structures as well as their magnetic and structural properties has been studied. Homogenous (Ga,Mn)(Bi,As) layers of high structural perfection have been grown by the low-temperature molecular-beam epitaxy technique. Post-growth annealing treatment of the layers results in an improvement of their structural and magnetic properties and an increase in the hole concentration in the layers. The modulation photoreflectance spectroscopy results are consistent with the valence-band model of hole-mediated ferromagnetism in the layers. This material combines the properties of (Ga,Mn)As and Ga(Bi,As) ternary compounds and offers the possibility of tuning its electrical and magnetic properties by controlling the alloy composition. (C) 2014 AIP Publishing LLC.

U2 - 10.1063/1.4893381

DO - 10.1063/1.4893381

M3 - Article

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 7

M1 - 072402

ER -