Free carrier absorption and inter-subband transitions in imperfect heterostructures

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Abstract

We present the results of a quantum mechanical modelling of the free carrier absorption (FCA) in semiconductor heterolayers. Elastic and inelastic scatterers are considered with emphasis on the interface defects (optical phonons) contributions to the induced photon absorption for elastic (inelastic) scatterers. Various approaches to FCA are also presented (perturbation, Green's function technique). The connection between inter-subband absorption and FCA is thoroughly discussed. The absorption lineshape and its modification by suitable doping is presented.

Detaljer

Författare
Enheter & grupper
Externa organisationer
  • Paris Diderot University
  • Lund University
  • Vienna University of Technology
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Den kondenserade materiens fysik

Nyckelord

Originalspråkengelska
Artikelnummer023001
TidskriftSemiconductor Science and Technology
Volym29
Utgåva nummer2
StatusPublished - 2014
PublikationskategoriForskning
Peer review utfördJa

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