Gate defined quantum dot realized in a single crystalline InSb nanosheet

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Abstract

A single crystalline InSb nanosheet is an emerging planar semiconductor material with potential applications in electronics, infrared optoelectronics, spintronics, and topological quantum computing. Here, we report on the realization of a quantum dot device from a single crystalline InSb nanosheet grown by molecular-beam epitaxy. The device is fabricated from the nanosheet on a Si/SiO2 substrate, and quantum dot confinement is achieved by the top gate technique. Transport measurements of the device are carried out at a low temperature in a dilution refrigerator. It is found that the measured charge stability diagram is characterized by a series of small Coulomb diamonds at high plunger gate voltages and a series of large Coulomb diamonds at low plunger gate voltages, demonstrating the formation of a gate-tunable quantum dot in the InSb nanosheet. Gate-defined planar InSb quantum dots offer a renewed platform for developing semiconductor-based quantum computation technology.

Detaljer

Författare
  • Jianhong Xue
  • Yuanjie Chen
  • Dong Pan
  • Ji Yin Wang
  • Jianhua Zhao
  • Shaoyun Huang
  • H. Q. Xu
Enheter & grupper
Externa organisationer
  • Peking University
  • Institute of Semiconductors Chinese Academy of Sciences
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Nanoteknik
Originalspråkengelska
Artikelnummer023108
TidskriftApplied Physics Letters
Volym114
Utgivningsnummer2
StatusPublished - 2019
PublikationskategoriForskning
Peer review utfördJa