Gate-defined double quantum dot with integrated charge sensors realized in InGaAs/InP by incorporating a high-kappa dielectric

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A gate-defined double quantum dot with two integrated quantum point contact charge sensors is realized in an InGaAs/InP heterostructure by employing a high-kappa HfO2 thin film as gate dielectric and a polymer bridge technique. Clear honeycomb patterns are observed in the measured charge stability diagram of the double quantum dot and charge sensing signals of the quantum point contacts. It is also found that the quantum point contact charge sensors can detect the charge states in the double quantum dot even in the condition that the direct transport signal is not visible. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3409223]


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  • Den kondenserade materiens fysik
TidskriftApplied Physics Letters
Utgåva nummer16
StatusPublished - 2010
Peer review utfördJa