Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

Bibtex

@article{9ef1290ce03542ae959a31055e85b8bc,
title = "Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric",
abstract = "Gate-defined quantum dots in an InGaAs/InP heterostructure are realized by incorporating a high-kappa HfO2 material as a gate dielectric using atomic layer deposition. The fabricated quantum-dot devices show Coulomb blockade effect at low temperature. The Coulomb blockade current peaks are found to shift in pairs with the magnetic field applied perpendicular to the quantum-dot plane, due to the filling of electrons into spin-degenerate orbital states. When the magnetic field is applied parallel to the quantum-dot plane, spin splittings of orbital states are observed and the extracted effective g-factors are found to be different for different orbital states.",
keywords = "quantum, well devices, semiconductor quantum dots, quantum interference devices, nanotechnology, indium compounds, III-V semiconductors, high-k dielectric thin films, hafnium compounds, g-factor, gallium arsenide, atomic layer deposition, Coulomb blockade",
author = "Jie Sun and Marcus Larsson and Ivan Maximov and Hilde Hardtdegen and Hongqi Xu",
year = "2009",
doi = "10.1063/1.3077188",
language = "English",
volume = "94",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics (AIP)",
number = "4",

}