Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric

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Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric. / Sun, Jie; Larsson, Marcus; Maximov, Ivan; Hardtdegen, Hilde; Xu, Hongqi.

I: Applied Physics Letters, Vol. 94, Nr. 4, 042114, 2009.

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Sun, Jie ; Larsson, Marcus ; Maximov, Ivan ; Hardtdegen, Hilde ; Xu, Hongqi. / Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric. I: Applied Physics Letters. 2009 ; Vol. 94, Nr. 4.

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TY - JOUR

T1 - Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric

AU - Sun, Jie

AU - Larsson, Marcus

AU - Maximov, Ivan

AU - Hardtdegen, Hilde

AU - Xu, Hongqi

PY - 2009

Y1 - 2009

N2 - Gate-defined quantum dots in an InGaAs/InP heterostructure are realized by incorporating a high-kappa HfO2 material as a gate dielectric using atomic layer deposition. The fabricated quantum-dot devices show Coulomb blockade effect at low temperature. The Coulomb blockade current peaks are found to shift in pairs with the magnetic field applied perpendicular to the quantum-dot plane, due to the filling of electrons into spin-degenerate orbital states. When the magnetic field is applied parallel to the quantum-dot plane, spin splittings of orbital states are observed and the extracted effective g-factors are found to be different for different orbital states.

AB - Gate-defined quantum dots in an InGaAs/InP heterostructure are realized by incorporating a high-kappa HfO2 material as a gate dielectric using atomic layer deposition. The fabricated quantum-dot devices show Coulomb blockade effect at low temperature. The Coulomb blockade current peaks are found to shift in pairs with the magnetic field applied perpendicular to the quantum-dot plane, due to the filling of electrons into spin-degenerate orbital states. When the magnetic field is applied parallel to the quantum-dot plane, spin splittings of orbital states are observed and the extracted effective g-factors are found to be different for different orbital states.

KW - quantum

KW - well devices

KW - semiconductor quantum dots

KW - quantum interference devices

KW - nanotechnology

KW - indium compounds

KW - III-V semiconductors

KW - high-k dielectric thin films

KW - hafnium compounds

KW - g-factor

KW - gallium arsenide

KW - atomic layer deposition

KW - Coulomb blockade

U2 - 10.1063/1.3077188

DO - 10.1063/1.3077188

M3 - Article

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 4

M1 - 042114

ER -