Gate-Length Dependence of Vertical GaSb Nanowire p-MOSFETs on Si

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Bibtex

@article{288f9e7602084283b69345ae908240bd,
title = "Gate-Length Dependence of Vertical GaSb Nanowire p-MOSFETs on Si",
abstract = "The effect of gate-length variation on key transistor metrics for vertical nanowire p-type GaSb metal-oxide-semiconductor field-effect transistors (MOSFETs) are demonstrated using a gate-last process. The new fabrication method enables short gate-lengths (Lg = 40 nm) and allows for selective digital etching of the channel region. Extraction of material properties as well as contact resistance are obtained by systematically varying the gate-length. The fabricated transistors show excellent modulation properties with a maximum Ion/Ioff = 700 (VGS = -0.5,,V) as well as peak transconductance of 50 μS/μm with a linear subthreshold swing of 224 mV/dec.",
author = "Adam J{\"o}nsson and Johannes Svensson and Erik Lind and Lars-Erik Wernersson",
year = "2020",
month = aug,
day = "20",
doi = "10.1109/TED.2020.3012126",
language = "English",
volume = "67",
pages = "4118--4122",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "IEEE - Institute of Electrical and Electronics Engineers Inc.",
number = "10",

}