Gate-Length Dependence of Vertical GaSb Nanowire p-MOSFETs on Si

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Gate-Length Dependence of Vertical GaSb Nanowire p-MOSFETs on Si. / Jönsson, Adam; Svensson, Johannes; Lind, Erik; Wernersson, Lars-Erik.

I: IEEE Transactions on Electron Devices, Vol. 67, Nr. 10, 20.08.2020, s. 4118-4122.

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

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TY - JOUR

T1 - Gate-Length Dependence of Vertical GaSb Nanowire p-MOSFETs on Si

AU - Jönsson, Adam

AU - Svensson, Johannes

AU - Lind, Erik

AU - Wernersson, Lars-Erik

PY - 2020/8/20

Y1 - 2020/8/20

N2 - The effect of gate-length variation on key transistor metrics for vertical nanowire p-type GaSb metal-oxide-semiconductor field-effect transistors (MOSFETs) are demonstrated using a gate-last process. The new fabrication method enables short gate-lengths (Lg = 40 nm) and allows for selective digital etching of the channel region. Extraction of material properties as well as contact resistance are obtained by systematically varying the gate-length. The fabricated transistors show excellent modulation properties with a maximum Ion/Ioff = 700 (VGS = -0.5,,V) as well as peak transconductance of 50 μS/μm with a linear subthreshold swing of 224 mV/dec.

AB - The effect of gate-length variation on key transistor metrics for vertical nanowire p-type GaSb metal-oxide-semiconductor field-effect transistors (MOSFETs) are demonstrated using a gate-last process. The new fabrication method enables short gate-lengths (Lg = 40 nm) and allows for selective digital etching of the channel region. Extraction of material properties as well as contact resistance are obtained by systematically varying the gate-length. The fabricated transistors show excellent modulation properties with a maximum Ion/Ioff = 700 (VGS = -0.5,,V) as well as peak transconductance of 50 μS/μm with a linear subthreshold swing of 224 mV/dec.

U2 - 10.1109/TED.2020.3012126

DO - 10.1109/TED.2020.3012126

M3 - Article

VL - 67

SP - 4118

EP - 4122

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 10

ER -