g-factor and exchange energy in a few-electron lateral InGaAs quantum dot

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Abstract

We report on the measurements of the g-factor and the exchange Interaction of electrons in a few-electron lateral quantum dot formed in an InGaAs/InP semiconductor heterostructure. The spin filling sequence of the electron states in the dot is determined by magnetotransport measurements and parallel spin filling configurations are Identified The measured g-factor (for a magnetic field applied parallel to the InGaAs quantum layer) has it Value in the range of vertical bar g*vertical bar approximate to 2 to vertical bar g*vertical bar approximate to 4 and is strongly level-dependent. By analysis of the energies of the states which favor a parallel spin filling. the lower bound of the exchange energy of electrons in the clot in the order of similar to 210 mu eV is extracted. (C) 2009 American Institute of Physics.

Detaljer

Författare
  • Marcus Larsson
  • Henrik Nilsson
  • H. Hardtdegen
  • Hongqi Xu
Enheter & grupper
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Den kondenserade materiens fysik
Originalspråkengelska
Artikelnummer192112
TidskriftApplied Physics Letters
Volym95
Utgåva nummer19
StatusPublished - 2009
PublikationskategoriForskning
Peer review utfördJa