Gold-free GaAs/GaAsSb heterostructure nanowires grown on silicon

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Gold-free GaAs/GaAsSb heterostructure nanowires grown on silicon. / Plissard, S.; Dick Thelander, Kimberly; Wallart, X.; Caroff, P.

I: Applied Physics Letters, Vol. 96, Nr. 12, 121901, 2010.

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TY - JOUR

T1 - Gold-free GaAs/GaAsSb heterostructure nanowires grown on silicon

AU - Plissard, S.

AU - Dick Thelander, Kimberly

AU - Wallart, X.

AU - Caroff, P.

PY - 2010

Y1 - 2010

N2 - Growth of GaAs/GaAsSb heterostructure nanowires on silicon without the need for gold seed particles is presented. A high vertical yield of GaAs nanowires is first obtained, and then GaAsxSb1-x segments are successfully grown axially in these nanowires. GaAsSb can also be integrated as a shell around the GaAs core. Finally, two GaAsSb segments are grown inside a GaAs nanowire and passivated using an AlxGa1-xAs shell. It is found that no stacking faults or twin planes occur in the GaAsSb segments.

AB - Growth of GaAs/GaAsSb heterostructure nanowires on silicon without the need for gold seed particles is presented. A high vertical yield of GaAs nanowires is first obtained, and then GaAsxSb1-x segments are successfully grown axially in these nanowires. GaAsSb can also be integrated as a shell around the GaAs core. Finally, two GaAsSb segments are grown inside a GaAs nanowire and passivated using an AlxGa1-xAs shell. It is found that no stacking faults or twin planes occur in the GaAsSb segments.

KW - semiconductor quantum wires

KW - semiconductor

KW - semiconductor growth

KW - nanowires

KW - nanofabrication

KW - growth

KW - molecular beam epitaxial

KW - gallium arsenide

KW - III-V semiconductors

KW - heterojunctions

U2 - 10.1063/1.3367746

DO - 10.1063/1.3367746

M3 - Article

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 12

M1 - 121901

ER -