Growth and optical properties of InxGa1−xP nanowires synthesized by selective-area epitaxy
Forskningsoutput: Tidskriftsbidrag › Artikel i vetenskaplig tidskrift
Abstract
Ternary III–V nanowires (NWs) cover a wide range of wavelengths in the solar spectrum and would greatly benefit from being synthesized as position-controlled arrays for improved vertical yield, reproducibility, and tunable optical absorption. Here, we report on successful selective-area epitaxy of metal-particle-free vertical InxGa1−xP NW arrays using metal–organic vapor phase epitaxy and detail their optical properties. A systematic growth study establishes the range of suitable growth parameters to obtain uniform NW growth over a large array. The optical properties of the NWs were characterized by room-temperature cathodoluminescence spectroscopy. Tunability of the emission wavelength from 870 nm to approximately 800 nm was achieved. Transmission electron microscopy and energy dispersive X-ray measurements performed on cross-section samples revealed a pure wurtzite crystal structure with very few stacking faults and a slight composition gradient along the NW growth axis. [Figure not available: see fulltext.]
Detaljer
Författare | |
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Enheter & grupper | |
Externa organisationer |
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Forskningsområden | Ämnesklassifikation (UKÄ) – OBLIGATORISK
Nyckelord |
Originalspråk | engelska |
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Sidor (från-till) | 672-682 |
Antal sidor | 11 |
Tidskrift | Nano Research |
Volym | 10 |
Utgåva nummer | 2 |
Tidigt onlinedatum | 2016 dec 1 |
Status | Published - 2017 feb |
Publikationskategori | Forskning |
Peer review utförd | Ja |