Growth and optical properties of InxGa1−xP nanowires synthesized by selective-area epitaxy

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Ternary III–V nanowires (NWs) cover a wide range of wavelengths in the solar spectrum and would greatly benefit from being synthesized as position-controlled arrays for improved vertical yield, reproducibility, and tunable optical absorption. Here, we report on successful selective-area epitaxy of metal-particle-free vertical InxGa1−xP NW arrays using metal–organic vapor phase epitaxy and detail their optical properties. A systematic growth study establishes the range of suitable growth parameters to obtain uniform NW growth over a large array. The optical properties of the NWs were characterized by room-temperature cathodoluminescence spectroscopy. Tunability of the emission wavelength from 870 nm to approximately 800 nm was achieved. Transmission electron microscopy and energy dispersive X-ray measurements performed on cross-section samples revealed a pure wurtzite crystal structure with very few stacking faults and a slight composition gradient along the NW growth axis. [Figure not available: see fulltext.]


  • Alexander Berg
  • Philippe Caroff
  • Naeem Shahid
  • Mark N. Lockrey
  • Xiaoming Yuan
  • Magnus T. Borgström
  • Hark Hoe Tan
  • Chennupati Jagadish
Enheter & grupper
Externa organisationer
  • Australian National University

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Nanoteknik


Sidor (från-till)672-682
Antal sidor11
TidskriftNano Research
Utgåva nummer2
Tidigt onlinedatum2016 dec 1
StatusPublished - 2017 feb
Peer review utfördJa