Growth of InAs NWs with controlled morphology by CVD

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

Abstract

We report on the growth of single crystal InAs NWs on Si/SiOx substrates by chemical vapor deposition (CVD). By adjusting growth parameters, the diameters, morphology, length and the proportion of superlattice ZB InAs NWs (NWs) can be controlled on a Si/SiOx substrate. Our work provides a low-cost route to grow and phase-engineer single crystal InAs NWs for a wide range of potential applications.

Detaljer

Författare
Enheter & grupper
Externa organisationer
  • Peking University
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Den kondenserade materiens fysik
Originalspråkengelska
Artikelnummer012013
TidskriftJournal of Physics: Conference Series
Volym864
Utgåva nummer1
StatusPublished - 2017 aug 15
PublikationskategoriForskning
Peer review utfördJa